Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam

	Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam
	Du, XF ; Zhang, T ; song, zt(重点实验室） ; Liu, WL ; Liu, XY ; Gu, YF ; Lv, SL ; Xue, WJ ; Xi, WFeng, SL
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2011
卷号	50 期号:7 页码:70211
关键词	Physics Applied
ISSN号	0021-4922
学科主题	Physics
收录类别	SCI
原文出处	10.1143/JJAP.50.070211
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115460]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Du, XF,Zhang, T,song, zt,et al. Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2011,50(7):70211.
APA	Du, XF.,Zhang, T.,song, zt.,Liu, WL.,Liu, XY.,...&Xi, WFeng, SL.(2011).Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam.JAPANESE JOURNAL OF APPLIED PHYSICS,50(7),70211.
MLA	Du, XF,et al."Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam".JAPANESE JOURNAL OF APPLIED PHYSICS 50.7(2011):70211.