Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

	Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
	Jayasinghe, RC ; Lao, YF ; Perera, AGU ; Hammar, M ; Cao, CF ; Wu, HZ
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	2012
卷号	24 期号:43 页码:435803
关键词	Physics Condensed Matter
ISSN号	0953-8984
学科主题	Physics
收录类别	SCI
原文出处	10.1088/0953-8984/24/43/435803
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115315]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Jayasinghe, RC,Lao, YF,Perera, AGU,et al. Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(43):435803.
APA	Jayasinghe, RC,Lao, YF,Perera, AGU,Hammar, M,Cao, CF,&Wu, HZ.(2012).Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films.JOURNAL OF PHYSICS-CONDENSED MATTER,24(43),435803.
MLA	Jayasinghe, RC,et al."Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films".JOURNAL OF PHYSICS-CONDENSED MATTER 24.43(2012):435803.