Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy

	Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
	Li, SG ; Gong, Q ; Cao, CF ; Wang, XZ ; Yue, L ; Liu, QB ; Wang, HL ; Wang, Y
刊名	INFRARED PHYSICS & TECHNOLOGY
	2012
卷号	55 期号:41308 页码:205-209
关键词	Instruments & Instrumentation Physics Optics Applied
ISSN号	1350-4495
学科主题	Instruments & Instrumentation; Optics; Physics
收录类别	SCI
原文出处	10.1016/j.infrared.2012.01.004
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115295]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Li, SG,Gong, Q,Cao, CF,et al. Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy[J]. INFRARED PHYSICS & TECHNOLOGY,2012,55(41308):205-209.
APA	Li, SG.,Gong, Q.,Cao, CF.,Wang, XZ.,Yue, L.,...&Wang, Y.(2012).Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy.INFRARED PHYSICS & TECHNOLOGY,55(41308),205-209.
MLA	Li, SG,et al."Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy".INFRARED PHYSICS & TECHNOLOGY 55.41308(2012):205-209.