The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD

	The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD
	Yang, XM ; Zhuge, LJ ; Wu, XM ; Yu, T ; Ge, SB
刊名	MICROELECTRONICS RELIABILITY
	2011
卷号	51 期号:12 页码:2115-2118
关键词	Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied
ISSN号	0026-2714
学科主题	Engineering; Science & Technology - Other Topics; Physics
收录类别	SCI
原文出处	10.1016/j.microrel.2011.04.006
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115285]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Yang, XM,Zhuge, LJ,Wu, XM,et al. The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD[J]. MICROELECTRONICS RELIABILITY,2011,51(12):2115-2118.
APA	Yang, XM,Zhuge, LJ,Wu, XM,Yu, T,&Ge, SB.(2011).The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD.MICROELECTRONICS RELIABILITY,51(12),2115-2118.
MLA	Yang, XM,et al."The influence of assisted ion beam bombardment on structure and electrical characteristics of HfSiO dielectric synthesized by DIBSD".MICROELECTRONICS RELIABILITY 51.12(2011):2115-2118.