Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film

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	Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film
	Zhou JP ; Chai CL ; Yang SY ; Liu ZK ; Song SL ; Chen NF
刊名	journal of crystal growth
	2004
卷号	260 期号:1-2 页码:136-142
关键词	photoluminescence
ISSN号	0022-0248
通讯作者	zhou, jp, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china.
中文摘要	a stoichiometric gd2o3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. gd2o3-x shares gd2o3 structures although there are many oxygen deficiencies in the film. the photoluminescence (pl) measurements have been performed in a temperature range 5-300 k. the detailed characters of the peak position, the full-width at half-maximum (fwhm) and the peak intensity at different temperature were reported. an anomalous intensity behavior of the pl spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the pl emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8222]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou JP,Chai CL,Yang SY,et al. Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film[J]. journal of crystal growth,2004,260(1-2):136-142.
APA	Zhou JP,Chai CL,Yang SY,Liu ZK,Song SL,&Chen NF.(2004).Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film.journal of crystal growth,260(1-2),136-142.
MLA	Zhou JP,et al."Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film".journal of crystal growth 260.1-2(2004):136-142.