A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

	A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs
	Chen, J ; Luo, JX ; Wu, QQ ; Chai, Z ; Yu, T ; Dong, YJ ; Wang, X（重点实验室）
刊名	IEEE ELECTRON DEVICE LETTERS
	2011
卷号	32 期号:10 页码:1346-1348
关键词	Engineering Electrical & Electronic
ISSN号	0741-3106
学科主题	Engineering
收录类别	SCI
原文出处	10.1109/LED.2011.2162813
语种	中文
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115136]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Chen, J,Luo, JX,Wu, QQ,et al. A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(10):1346-1348.
APA	Chen, J.,Luo, JX.,Wu, QQ.,Chai, Z.,Yu, T.,...&Wang, X.(2011).A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs.IEEE ELECTRON DEVICE LETTERS,32(10),1346-1348.
MLA	Chen, J,et al."A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs".IEEE ELECTRON DEVICE LETTERS 32.10(2011):1346-1348.