The properties of high-k gate dielectric films deposited on HRSOI

	The properties of high-k gate dielectric films deposited on HRSOI
	Cheng, XH（重点实验室） ; Xu, DP ; Song, ZR ; He, DW ; Yu, YH（重点实验室） ; Zhao, QT ; Shen, DS
刊名	MICROELECTRONIC ENGINEERING
	2009
卷号	86 期号:12 页码:2404-2407
关键词	Engineering Physics Electrical & Electronic Nanoscience & Nanotechnology Applied Optics
ISSN号	0167-9317
学科主题	Engineering; Science & Technology - Other Topics; Optics; Physics
收录类别	SCI
原文出处	10.1016/j.mee.2009.05.001
语种	英语
公开日期	2013-05-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/115105]
专题	上海微系统与信息技术研究所_信息功能材料国家重点实验室2008-2012_期刊论文
推荐引用方式 GB/T 7714	Cheng, XH,Xu, DP,Song, ZR,et al. The properties of high-k gate dielectric films deposited on HRSOI[J]. MICROELECTRONIC ENGINEERING,2009,86(12):2404-2407.
APA	Cheng, XH.,Xu, DP.,Song, ZR.,He, DW.,Yu, YH.,...&Shen, DS.(2009).The properties of high-k gate dielectric films deposited on HRSOI.MICROELECTRONIC ENGINEERING,86(12),2404-2407.
MLA	Cheng, XH,et al."The properties of high-k gate dielectric films deposited on HRSOI".MICROELECTRONIC ENGINEERING 86.12(2009):2404-2407.