Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

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	Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells
	Lu, W ; Li, DB ; Li, CR ; Shen, F ; Zhang, Z
刊名	journal of applied physics
	2004
卷号	95 期号:8 页码:4362-4366
关键词	CRITICAL LAYER THICKNESS
ISSN号	0021-8979
通讯作者	li, cr, chinese acad sci, inst phys, beijing lab electron microscopy, pob 603, beijing 100080, peoples r china. 电子邮箱地址: crli@aphy.iphy.ac.cn
中文摘要	ingan/gan multiquantum-well (mqw) structures grown by metalorganic chemical-vapor deposition on n-type gan and capped by p-type gan were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. for the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from mqw layers and extended to the cap layer was observed. these dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. because of indium outdiffusion from the well layers due to the anneal effect of mg-doped cap layer growth and defects generated from strain relaxation, the pl emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 ev. but for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. the measured critical thicknesses are consistent with the calculated values using the model proposed by fischer, kuhne, and richter. (c) 2004 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8122]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu, W,Li, DB,Li, CR,et al. Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells[J]. journal of applied physics,2004,95(8):4362-4366.
APA	Lu, W,Li, DB,Li, CR,Shen, F,&Zhang, Z.(2004).Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells.journal of applied physics,95(8),4362-4366.
MLA	Lu, W,et al."Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells".journal of applied physics 95.8(2004):4362-4366.