Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er
	Song, SF ; Chen, WD ; Zhu, JJ ; Hsu, CC
刊名	journal of crystal growth
	2004
卷号	265 期号:1-2 页码:78-82
关键词	defects
ISSN号	0022-0248
通讯作者	song, sf, chinese acad sci, inst semicond, po 912, beijing 100083, peoples r china. 电子邮箱地址: sfsong@red.semi.ac.cn
中文摘要	erbium was implanted with energies 200 or 400 kev into epitaxial (0 0 0 1) gan grown on (0 0 0 1) al2o3 substrate at room temperature (rt) and 400degreesc. both random (10degrees tilt from c-axis) and channeled (along c-axis) implantations were studied. rbs/channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. it was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. moreover, the photoluminscence (pl) properties of er-implanted gan thin filius were also studied. the experimental results indicate that the pl intensity can be enhanced by raising implantation energy or implanting along channeling direction. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8110]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song, SF,Chen, WD,Zhu, JJ,et al. Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er[J]. journal of crystal growth,2004,265(1-2):78-82.
APA	Song, SF,Chen, WD,Zhu, JJ,&Hsu, CC.(2004).Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er.journal of crystal growth,265(1-2),78-82.
MLA	Song, SF,et al."Dependence of implantation-induced damage with photoluminescence intensity in GaN : Er".journal of crystal growth 265.1-2(2004):78-82.