Effect of the oxygen concentration on the properties of Gd2O3 thin films

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	Effect of the oxygen concentration on the properties of Gd2O3 thin films
	Yin ZG
刊名	journal of crystal growth
	2004
卷号	265 期号:3-4 页码:548-552
关键词	dielectric constant
ISSN号	0022-0248
通讯作者	li, yl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ylli@red.semi.ac.cn
中文摘要	gd2o3 thin films were deposited on si (100) substrates at 650degreesc by a magnetron sputtering system under different ar/o-2 ratios of 6:1, 4:1 and 2:1. the effect of the oxygen concentration on the properties of oxide thin films was investigated by x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy and capacitance-voltage (c-v)measurement. x-ray diffraction shows that the structure of oxide films changed from the monoclinic gd2o3 phase to cubic gd2o3 phase when the oxygen concentration increased. according to c-v measurement, the dielectric constant value of the samples deposited at different ar/o-2 ratios is about 12. (c) 2004 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8078]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Effect of the oxygen concentration on the properties of Gd2O3 thin films[J]. journal of crystal growth,2004,265(3-4):548-552.
APA	Yin ZG.(2004).Effect of the oxygen concentration on the properties of Gd2O3 thin films.journal of crystal growth,265(3-4),548-552.
MLA	Yin ZG."Effect of the oxygen concentration on the properties of Gd2O3 thin films".journal of crystal growth 265.3-4(2004):548-552.