Structure and photoluminescence studies of Pr-implanted GaN

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	Structure and photoluminescence studies of Pr-implanted GaN
	Song SF ; Chen WD ; Su FH ; Zhu JJ ; Ding K ; Hsu CC
刊名	journal of crystal growth
	2004
卷号	267 期号:3-4 页码:400-404
关键词	doping
ISSN号	0022-0248
通讯作者	song, sf, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sfsong@red.semi.ac.cn
中文摘要	the structure and photoluminscence (pl) properties of pr-implanted gan thin films have been studied. rbs/channeling technique was used to explore the damage recovery at high annealing temperature and study the dependence of the radiation damage with ion implantation direction. a complete recovery of the ion implantation damage cannot be achieved at annealing temperatures up to 1050degreesc. it is found that the channeling implantation results in the decrease of the damage. the pl experimental results indicate that the pl efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050degreesc. moreover, the pl intensity is also seriously affected by ion implantation geometries. the pl intensity for the sample implanted along channeled direction is nearly 2 times more intense than that observed from the sample implanted along random direction. the thermal quenching of pl intensity from 10 to 300k for sample annealed at 1050degreesc is only 30%. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8028]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Song SF,Chen WD,Su FH,et al. Structure and photoluminescence studies of Pr-implanted GaN[J]. journal of crystal growth,2004,267(3-4):400-404.
APA	Song SF,Chen WD,Su FH,Zhu JJ,Ding K,&Hsu CC.(2004).Structure and photoluminescence studies of Pr-implanted GaN.journal of crystal growth,267(3-4),400-404.
MLA	Song SF,et al."Structure and photoluminescence studies of Pr-implanted GaN".journal of crystal growth 267.3-4(2004):400-404.