1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

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	1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror
	Li CB ; Mao RW ; Zuo YH ; Zhao L ; Shi WH ; Luo LP ; Cheng BW ; Yu JZ ; Wang QM
刊名	applied physics letters
	2004
卷号	85 期号:14 页码:2697-2699
关键词	WAVE-GUIDE PHOTODETECTOR
ISSN号	0003-6951
通讯作者	li, cb, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: cbli@mail.semi.ac.cn
中文摘要	a 1.55 mum ge islands resonant-cavity-enhanced (rce) detector with high-reflectivity bottom mirror was fabricated by a simple method. the bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried sio2 layer in silicon-on-insulator substrate as the etch-stop layer. reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mum. the peak responsivity of the rce detector at 1543.8 nm is 0.028 ma/w and a full width at half maximum of 5 nm is obtained. compared with the conventional p-i-n photodetector, the responsivity of rce detector has a nearly threefold enhancement. (c) 2004 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7940]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li CB,Mao RW,Zuo YH,et al. 1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror[J]. applied physics letters,2004,85(14):2697-2699.
APA	Li CB.,Mao RW.,Zuo YH.,Zhao L.,Shi WH.,...&Wang QM.(2004).1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror.applied physics letters,85(14),2697-2699.
MLA	Li CB,et al."1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror".applied physics letters 85.14(2004):2697-2699.