Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates

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	Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
	Tan PH; Jiang DS
刊名	solid state communications
	2004
卷号	132 期号:10 页码:707-711
关键词	GaAsSbN epilayer
ISSN号	0038-1098
通讯作者	bian, lf, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lfbian@pdi-berlin.de
中文摘要	the photoluminescence (pl) characteristics of gaassbn/gaas epilayers grown by molecular beam epitaxy (mbe) are carefully investigated. the results show that antimony (sb) incorporation into ganas material has less influence on the n-induced localization states. for the same n concentration, gaassbn material can reach an emission wavelength near 1.3 mum more easily than gainnas material. the rapid thermal annealing (rta) experiment shows that the annealing induced rearrangement of atoms and related blueshift in gaassbn epilayers are smaller than those in ganas and gainnas epilayers. the gaassbn material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. raman spectroscopy analysis gives further insight into the structure stability of gaassbn material after annealing. (c) 2004 elsevier ltd. all rights reserved.
英文摘要	the photoluminescence (pl) characteristics of gaassbn/gaas epilayers grown by molecular beam epitaxy (mbe) are carefully investigated. the results show that antimony (sb) incorporation into ganas material has less influence on the n-induced localization states. for the same n concentration, gaassbn material can reach an emission wavelength near 1.3 mum more easily than gainnas material. the rapid thermal annealing (rta) experiment shows that the annealing induced rearrangement of atoms and related blueshift in gaassbn epilayers are smaller than those in ganas and gainnas epilayers. the gaassbn material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. raman spectroscopy analysis gives further insight into the structure stability of gaassbn material after annealing. (c) 2004 elsevier ltd. all rights reserved.; 于批量导入; 于批量导入; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; cnrs, lpn, f-91460 marcoussis, france
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7890]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH,Jiang DS. Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates[J]. solid state communications,2004,132(10):707-711.
APA	Tan PH,&Jiang DS.(2004).Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates.solid state communications,132(10),707-711.
MLA	Tan PH,et al."Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates".solid state communications 132.10(2004):707-711.