Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells

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	Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells
	Li SS ; Xia JB
刊名	nanoscale research letters
	2009
卷号	4 期号:2 页码:178-180
关键词	ENERGY-SPECTRA STATES
ISSN号	1931-7573
通讯作者	li ss chinese acad sci inst semicond state key lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	the rashba spin-orbit splitting of a hydrogenic donor impurity in gaas/gaalas quantum wells is investigated theoretically in the framework of effective-mass envelope function theory. the rashba effect near the interface between gaas and gaalas is assumed to be a linear relation with the distance from the quantum well side. we find that the splitting energy of the excited state is larger and less dependent on the position of the impurity than that of the ground state. our results are useful for the application of rashba spin-orbit coupling to photoelectric devices.
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 60776061 60521001this work was supported by the national natural science foundation of china under grant nos. 60776061, and 60521001.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7427]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS,Xia JB. Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells[J]. nanoscale research letters,2009,4(2):178-180.
APA	Li SS,&Xia JB.(2009).Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells.nanoscale research letters,4(2),178-180.
MLA	Li SS,et al."Linear Rashba Model of a Hydrogenic Donor Impurity in GaAs/GaAlAs Quantum Wells".nanoscale research letters 4.2(2009):178-180.