The junction temperature and forward voltage relationship of GaN-based laser diode

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The junction temperature and forward voltage relationship of GaN-based laser diode
	Liu YT ; Cao Q ; Song GF ; Chen LH
刊名	laser physics
	2009
卷号	19 期号:3 页码:400-402
关键词	HIGH-POWER
ISSN号	1054-660x
通讯作者	liu yt chinese acad sci inst semicond nano optoelect lab beijing 100083 peoples r china. e-mail address: ytliu@semi.ac.cn
中文摘要	in gaas-based light-emitting diode (led) or laser diode (ld), the forward voltage (v) will decrease linearly with the increasing junction temperature (t). this can be used as a convenient method to measure the junction temperature. in gan-based led, the relationship is linear too. but in gan-based ld, the acceptor m (g) in p-gan material can not ionize completely at-room temperature, and the carrier density will change with temperature. but we find finally that, this change won't lead to a nonlinear relationship of v-t. our experiments show that it is linear too.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7303]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Liu YT,Cao Q,Song GF,et al. The junction temperature and forward voltage relationship of GaN-based laser diode[J]. laser physics,2009,19(3):400-402.
APA	Liu YT,Cao Q,Song GF,&Chen LH.(2009).The junction temperature and forward voltage relationship of GaN-based laser diode.laser physics,19(3),400-402.
MLA	Liu YT,et al."The junction temperature and forward voltage relationship of GaN-based laser diode".laser physics 19.3(2009):400-402.