Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE

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	Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE
	Wang BZ ; Wang XL
刊名	journal of inorganic materials
	2009
卷号	24 期号:3 页码:559-562
关键词	AlInGaN RF-MBE structural properties optical properties
ISSN号	1000-324x
通讯作者	wang bz hebei univ sci & technol inst informat sci & technol shijiazhuang 050018 peoples r china. e-mail address: wangbz@semi.ac.cn
中文摘要	alingan quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). alingan quaternary alloys with different compositions were acquired by changing the al cell's temperature. the streaky rheed patterns were observed during alingan quaternary alloys growth. scanning electron microscope (sem), rutherford back-scattering spectrometry (rbs), x-ray diffraction (xrd) and cathodoluminescence (cl) were used to characterize the structural and optical properties of the alingan alloys. the experimental results show that the alingan quaternary alloys grow on the gan buffer in the layer-by-layer growth mode. when the al cell's temperature is 920 degrees c, the al/in ratio in the alingan quaternary alloys is about 4.7, and the alingan can acquire better crystal and optical quality. the x-ray and cl full-width at half-maximum (fwhm) of the alingan are 5arcmin and 25nm, respectively.
学科主题	半导体材料
收录类别	SCI
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7189]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang BZ,Wang XL. Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE[J]. journal of inorganic materials,2009,24(3):559-562.
APA	Wang BZ,&Wang XL.(2009).Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE.journal of inorganic materials,24(3),559-562.
MLA	Wang BZ,et al."Epitaxial Growth of AlInGaN Quaternary Alloys by RF-MBE".journal of inorganic materials 24.3(2009):559-562.