Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs

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	Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs
	Ji XL
刊名	ieee journal of quantum electronics
	2009
卷号	45 期号:5-6 页码:575-578
关键词	AlGaN distributed Bragg reflector (DBR) resonant-cavity-enhanced (RCE) transfer-matrix-approach (TMA) ultraviolet (UV) photodetector (PD)
ISSN号	0018-9197
通讯作者	nie c nanjing univ nanjing 210093 peoples r china. e-mail address: nchbbc@gmail.com ; ndjrl@163.com ; jixiaoli2002@nju.org.cn ; xzl@nju.edu.cn ; mypostlb@163.com ; hanping@nju.cdu.cn ; rzhang@nju.edu.cn ; ydzheng@nju.edu.cn
中文摘要	algan-based resonant-cavity-enhanced (rce) p-i-n photodetectors (pds) for operating at the wavelength of 330 nm were designed and fabricated. a 20.5-pair aln/al0.3ga0.7n distributed bragg reflector (dbr) was used as the back mirror and a 3-pair aln/al0.3ga0.7n dbr as the front one. in the cavity is a p-gan/i-gan/n-al0.3ga0.7n structure. the optical absorption of the rce pd structure is at most 59.8% deduced from reflectance measurement. selectively enhanced by the cavity effect, a response peak of 0.128 a/w at 330 nm with a half-peak breadth of 5.5 nm was obtained under zero bias. the peak wavelength shifted 15 nm with the incident angle of light increasing from 0 degrees to 60 degrees.
学科主题	半导体器件
收录类别	SCI
资助信息	special funds for major state basic research project 973 2006cb6049 hi-tech research project 2006aa03a103 2006aa03a118 2006aa03a 142 national nature science foundation of china 60721063 60676057research fund for the doctoral program of higher education of china 20050284004 this work was supported in part by the special funds for major state basic research project under grant 973 (2006cb6049), in part by the hi-tech research project under grant 2006aa03a103, grant 2006aa03a 118, and grant 2006aa03a 142), in part by the national nature science foundation of china under grant 60721063 and grant 60676057, and in part by the research fund for the doctoral program of higher education of china under grant 20050284004.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7165]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ji XL. Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs[J]. ieee journal of quantum electronics,2009,45(5-6):575-578.
APA	Ji XL.(2009).Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs.ieee journal of quantum electronics,45(5-6),575-578.
MLA	Ji XL."Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs".ieee journal of quantum electronics 45.5-6(2009):575-578.