Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

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	Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
	Duan RF; Wei TB
刊名	nanoscale research letters
	2009
卷号	4 期号:7 页码:753-757
关键词	GaN Nonpolar HVPE Nanoindentation Cathodoluminescence Raman mapping
ISSN号	1931-7573
通讯作者	wei tb chinese acad sci semicond lighting technol res & dev ctr inst semicond beijing 100083 peoples r china. e-mail address: tbwei@semi.ac.cn
中文摘要	in this study, the deformation mechanisms of nonpolar gan thick films grown on m-sapphire by hydride vapor phase epitaxy (hvpe) are investigated using nanoindentation with a berkovich indenter, cathodoluminescence (cl), and raman microscopy. results show that nonpolar gan is more susceptible to plastic deformation and has lower hardness than c-plane gan. after indentation, lateral cracks emerge on the nonpolar gan surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. moreover, the quenching of cl luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. the recrystallization process happens in the indented regions for the load of 500 mn. raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.
学科主题	光电子学
收录类别	SCI
资助信息	national high technology program of china 2006aa03a143 national natural sciences foundation of china 60806001 knowledge innovation program of the chinese academy of sciences iscas2008t03 this study was supported by the national high technology program of china under grant no. 2006aa03a143, the national natural sciences foundation of china under grant no. 60806001, and the knowledge innovation program of the chinese academy of sciences under grant no. iscas2008t03. we would also like to thank professor li chen of peking university for his assistance in the cathodoluminescence experiments.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7149]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Duan RF,Wei TB. Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation[J]. nanoscale research letters,2009,4(7):753-757.
APA	Duan RF,&Wei TB.(2009).Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation.nanoscale research letters,4(7),753-757.
MLA	Duan RF,et al."Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation".nanoscale research letters 4.7(2009):753-757.