Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix

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	Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix
	Yang CL ; Cui XD ; Shen SQ ; Xu ZY ; Ge WK
刊名	physical review b
	2009
卷号	80 期号:3 页码:art. no. 035313
关键词	QUANTUM-WELLS SPINTRONICS ELECTRON
ISSN号	1098-0121
通讯作者	yang cl univ hong kong dept phys hong kong hong kong peoples r china. e-mail address: xdcui@hku.hk
中文摘要	electron-spin dynamics in inas/gaas heterostructures consisting of a single layer of inas (1/3-1 monolayer) embedded in (001) and (311)a gaas matrix was studied by means of time-resolved kerr rotation spectroscopy. the spin-relaxation time of the submonolayer inas samples is significantly enhanced, compared with that of the monolayer inas sample. the electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. the contribution from both the d'yakonov-perel' mechanism and bir-aronov-pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.
学科主题	半导体物理
收录类别	SCI
资助信息	hong kong grf hku701308p china nsf 60706021 1087424860876066the authors thank m. w. wu for helpful discussions. this work was supported by hong kong grf under grant no. hku701308p china nsf under grants no. 60706021 no. 10874248 and no. 60876066.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7043]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang CL,Cui XD,Shen SQ,et al. Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix[J]. physical review b,2009,80(3):art. no. 035313.
APA	Yang CL,Cui XD,Shen SQ,Xu ZY,&Ge WK.(2009).Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix.physical review b,80(3),art. no. 035313.
MLA	Yang CL,et al."Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix".physical review b 80.3(2009):art. no. 035313.