Photovoltaic effects in InGaN structures with p-n junctions

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	Photovoltaic effects in InGaN structures with p-n junctions
	Yang, CB ; Wang, XL ; Xiao, HL ; Ran, JX ; Wang, CM ; Hu, GX ; Wang, XH ; Zhang, XB ; Li, MP ; Li, JM
刊名	physica status solidi a-applications and materials science
	2007
卷号	204 期号:12 页码:4288-4291
关键词	FUNDAMENTAL-BAND GAP IN1-XGAXN ALLOYS INN
ISSN号	0031-8965
通讯作者	yang, cb, chinese acad sci, inst semicond, novel semicond mat lab, pob 912, beijing 100083, peoples r china. 电子邮箱地址: cbyang@semi.ac.en
中文摘要	ingan photovoltaic structures with p-n junctions have been fabricated by metal organic chemical vapour deposition. using double-crystal x-ray diffraction measurements, it was found that the room temperature band gaps of p-ingan and n-ingan films were 2.7 and 2.8 ev, respectively. values of 3.4 x 10(-2) ma cm(-2) short-circuit current, 0.43 v open-circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p-n junction connected back-to-back with a schottky barrier and many defects of the p-ingan film. 2007 wiley-vch verlag gmbh & co. kgaa, weinheim.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6906]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang, CB,Wang, XL,Xiao, HL,et al. Photovoltaic effects in InGaN structures with p-n junctions[J]. physica status solidi a-applications and materials science,2007,204(12):4288-4291.
APA	Yang, CB.,Wang, XL.,Xiao, HL.,Ran, JX.,Wang, CM.,...&Li, JM.(2007).Photovoltaic effects in InGaN structures with p-n junctions.physica status solidi a-applications and materials science,204(12),4288-4291.
MLA	Yang, CB,et al."Photovoltaic effects in InGaN structures with p-n junctions".physica status solidi a-applications and materials science 204.12(2007):4288-4291.