Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy

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	Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy
	Zhao, C ; Chen, YH ; Xu, B ; Tang, CG ; Wang, ZG ; Ding, F
刊名	applied physics letters
	2008
卷号	92 期号:6 页码:art. no. 063122
关键词	QUANTUM DOTS INAS
ISSN号	0003-6951
通讯作者	zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yhchen@red.semi.ac.cn
中文摘要	the properties of the wetting layer (wl) of inas nanorings grown by droplet epitaxy have been studied. the heavy-hole (hh) and light-hole (lh) related transitions of the in(ga)as wl were observed by reflectance difference spectroscopy. from the temperature dependent photoluminescence behavior of inas rings, the channel for carriers to redistribute was found to be the compressed gaas instead of the in(ga)as layer, which strongly indicated that the wetting layer was depleted around the rings. futhermore, a complex evolution of the wl with in deposition amount has been observed. (c) 2008 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6866]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, C,Chen, YH,Xu, B,et al. Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy[J]. applied physics letters,2008,92(6):art. no. 063122.
APA	Zhao, C,Chen, YH,Xu, B,Tang, CG,Wang, ZG,&Ding, F.(2008).Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy.applied physics letters,92(6),art. no. 063122.
MLA	Zhao, C,et al."Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy".applied physics letters 92.6(2008):art. no. 063122.