| Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal | |
| Shi XZ; Yuan DR; Guo SY; Cheng XF; Sun HQ; Li ZF; Song JA | |
| 刊名 | Journal of Crystal Growth
 |
| 2005 | |
| 期号 | 1页码:406-409 |
| 关键词 | X-ray diffraction Czochralski method gallium compounds |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6316754 |
| 专题 | 山东大学 |
| 作者单位 | Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi XZ,Yuan DR,Guo SY,et al. Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal[J]. Journal of Crystal Growth,2005(1):406-409. |
| APA | Shi XZ.,Yuan DR.,Guo SY.,Cheng XF.,Sun HQ.,...&Song JA.(2005).Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal.Journal of Crystal Growth(1),406-409. |
| MLA | Shi XZ,et al."Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal".Journal of Crystal Growth .1(2005):406-409. |
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