Structural properties of ne implanted GaN

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	Structural properties of ne implanted GaN
	Zhu JJ; Yang H; Liu W; Liu W; Lu GJ; Wang H; Zhao DG; Zhang SM; Jiang DS; Yang H
刊名	physica scripta
	2008
卷号	77 期号:3 页码:art. no. 035601
关键词	RAMAN-SCATTERING
ISSN号	0031-8949
通讯作者	majid, a, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: abdulmajid40@yahoo.com
中文摘要	we report a study on the micro-structural changes in gan due to neon ion implantation using the x-ray diffraction and raman scattering techniques. an implantation dose of 10(14) cm(-2) was found unable to produce lattice deformation observable by raman measurements. for higher doses of implantation several disorder activated raman scattering centers were observed which corroborate the literature. a new dose dependent feature has been recorded at 1595 cm(-1) for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6768]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhu JJ,Yang H,Liu W,et al. Structural properties of ne implanted GaN[J]. physica scripta,2008,77(3):art. no. 035601.
APA	Zhu JJ.,Yang H.,Liu W.,Liu W.,Lu GJ.,...&Wang YT.(2008).Structural properties of ne implanted GaN.physica scripta,77(3),art. no. 035601.
MLA	Zhu JJ,et al."Structural properties of ne implanted GaN".physica scripta 77.3(2008):art. no. 035601.