Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector

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	Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector
	Yang T; Ma WQ
刊名	applied physics letters
	2008
卷号	93 期号:1 页码:art. no. 013502
关键词	DETECTOR
ISSN号	0003-6951
通讯作者	ma, wq, chinese acad sci, inst semicond, lab nanooptoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wqma@semi.ac.cn
中文摘要	we report a bias voltage tunable two-color inas/gaas quantum dot infrared photodetector working under the normal incidence infared irradiation. the two-color detection of our device is realized by combining a photovoltaic and a photoconductive response by bias voltage tuning. the photovoltaic response is attributed to the transition of electron from the ground state to a high continuum state. the photoconductive response arises from the transition of electron from the ground state to the wetting layer state through the barrier via fowler-nordheim tunneling evidenced by a broad feature of the photocurrent peak on the high energy side. (c) 2008 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6540]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang T,Ma WQ. Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector[J]. applied physics letters,2008,93(1):art. no. 013502.
APA	Yang T,&Ma WQ.(2008).Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector.applied physics letters,93(1),art. no. 013502.
MLA	Yang T,et al."Voltage tunable two-color InAs/GaAs quantum dot infrared photodetector".applied physics letters 93.1(2008):art. no. 013502.