Effect of CO on characteristics of AlGaN/GaN Schottky diode

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	Effect of CO on characteristics of AlGaN/GaN Schottky diode
	Feng, C ; Wang, XL ; Yang, CB ; Xiao, HL ; Zhang, ML ; Jiang, LJ ; Tang, J ; Hu, GX ; Wang, JX ; Wang, ZG
刊名	chinese physics letters
	2008
卷号	25 期号:8 页码:3025-3027
关键词	HEMTS
ISSN号	0256-307x
通讯作者	feng, c, chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china. 电子邮箱地址: cfeng@semi.ac.cn
中文摘要	pt schottky diode gas sensors for co are fabricated using algan/ gan high electron mobility transistor ( hemts) structure. the diodes show a remarkable sensor signal (3 ma, in n-2; 2ma in air ambient) biased 2v after 1% co is introduced at 50 degrees c. the schottky barrier heights decrease for 36mev and 27mev in the two cases respectively. the devices exhibit a slow recovery characteristic in air ambient but almost none in the background of pure n2, which reveals that oxygen molecules could accelerate the desorption of co and offer restrictions to co detection.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6534]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Feng, C,Wang, XL,Yang, CB,et al. Effect of CO on characteristics of AlGaN/GaN Schottky diode[J]. chinese physics letters,2008,25(8):3025-3027.
APA	Feng, C.,Wang, XL.,Yang, CB.,Xiao, HL.,Zhang, ML.,...&Wang, ZG.(2008).Effect of CO on characteristics of AlGaN/GaN Schottky diode.chinese physics letters,25(8),3025-3027.
MLA	Feng, C,et al."Effect of CO on characteristics of AlGaN/GaN Schottky diode".chinese physics letters 25.8(2008):3025-3027.