Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

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	Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells
	Lin GJ ; Lai HK ; Li C ; Chen SY ; Yu JZ
刊名	chinese physics b
	2008
卷号	17 期号:9 页码:3479-3483
关键词	Si/SiGe
ISSN号	1674-1056
通讯作者	lin, gj, xiamen univ, dept phys, semicond photon res ctr, xiamen 361005, peoples r china. 电子邮箱地址: xinghun1201@sohu.com
中文摘要	the hole subband structures and effective masses of tensile strained si/si1-ygey quantum wells are calculated by using the 6x6 k.p method. the results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained si/si0.55ge0.45 quantum well grown on a relaxed si0.5ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm(-1).
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china 50672079 6033601060676027national basic research program of china 2007cb613400 project supported by national natural science foundation of china (grant nos 50672079, 60336010 and 60676027) and national basic research program of china (grant no 2007cb613400)
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6462]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lin GJ,Lai HK,Li C,et al. Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells[J]. chinese physics b,2008,17(9):3479-3483.
APA	Lin GJ,Lai HK,Li C,Chen SY,&Yu JZ.(2008).Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells.chinese physics b,17(9),3479-3483.
MLA	Lin GJ,et al."Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells".chinese physics b 17.9(2008):3479-3483.