Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

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	Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector
	Zhang, S ; Zhao, DG ; Jiang, DS ; Liu, WB ; Duan, LH ; Wang, YT ; Zhu, JJ ; Liu, ZS ; Zhang, SM ; Yang, H
刊名	semiconductor science and technology
	2008
卷号	23 期号:10 页码:art. no. 105015
关键词	METAL ULTRAVIOLET PHOTODETECTORS UV DETECTORS
ISSN号	0268-1242
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn
中文摘要	the unexpected decrease in measured responsivity observed in a specific gan schottky barrier photodetector (pd) at high reverse bias voltage was investigated and explained. device equivalent transforms and small signal analysis were performed to analyse the test circuit. on this basis, a model was built which explained the responsivity decrease quantitatively. after being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. it is proved that the decrease is related to the dynamic parallel resistance of the photodiode. the results indicate that with a gan schottky pd, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60776047 605060016047602160576003the authors acknowledge the support from the national natural science foundation of china (grant nos 60776047, 60506001, 60476021 and 60576003).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6454]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, S,Zhao, DG,Jiang, DS,et al. Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector[J]. semiconductor science and technology,2008,23(10):art. no. 105015.
APA	Zhang, S.,Zhao, DG.,Jiang, DS.,Liu, WB.,Duan, LH.,...&Yang, H.(2008).Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector.semiconductor science and technology,23(10),art. no. 105015.
MLA	Zhang, S,et al."Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector".semiconductor science and technology 23.10(2008):art. no. 105015.