Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries
	Zhang, LX ; Da Silva, JLF ; Li, JB ; Yan, YF ; Gessert, TA ; Wei, SH
刊名	physical review letters
	2008
卷号	101 期号:15 页码:art. no. 155501
关键词	POSITIONING TWIN BOUNDARIES CDS/CDTE SOLAR-CELLS SEMICONDUCTORS ZNTE
ISSN号	0031-9007
通讯作者	zhang, lx, natl renewable energy lab, golden, co 80401 usa.
中文摘要	using a first-principles method, we investigate the structural and electronic properties of grain boundaries (gbs) in polycrystalline cdte and the effects of copassivation of elements with far distinct electronegativities. of the two types of gbs studied in this letter, we find that the cd core is less harmful to the carrier transport, but is difficult to passivate with impurities such as cl and cu, whereas the te core creates a high defect density below the conduction band minimum, but all these levels can be removed by copassivation of cl and cu. our analysis indicates that for most polycrystalline systems copassivation or multipassivation is required to passivate the gbs.
学科主题	半导体物理
收录类别	SCI
资助信息	u.s. doe de-ac36-99go10337 cas the work at nrel is supported by the u.s. doe under contract no. de-ac36-99go10337. j.b.l. acknowledges financial support from the "one-hundred talents plan'' of the cas.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6408]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, LX,Da Silva, JLF,Li, JB,et al. Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries[J]. physical review letters,2008,101(15):art. no. 155501.
APA	Zhang, LX,Da Silva, JLF,Li, JB,Yan, YF,Gessert, TA,&Wei, SH.(2008).Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries.physical review letters,101(15),art. no. 155501.
MLA	Zhang, LX,et al."Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries".physical review letters 101.15(2008):art. no. 155501.