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Far-infrared absorption studies of Be acceptors in delta-doped GaAs/AlAs multiple quantum wells
Zheng Weimin; Halsall, M. P.; Harrison, P.; Steer, M. J.
刊名SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY
2006
卷号49期号:6页码:702-708
关键词shallow acceptor impurities delta-doped GaAs/AlAs multiple quantum wells far-infrared absorptions
DOI10.1007/s11434-006-2008-1
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/6264892
专题山东大学
作者单位1.Shandong Univ Weihai, Dept Appl Phys, Weihai 264209, Peoples R China.
2.Univ Manchester, Sch Phys & Astron, Manchester M60
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GB/T 7714
Zheng Weimin,Halsall, M. P.,Harrison, P.,et al. Far-infrared absorption studies of Be acceptors in delta-doped GaAs/AlAs multiple quantum wells[J]. SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,2006,49(6):702-708.
APA Zheng Weimin,Halsall, M. P.,Harrison, P.,&Steer, M. J..(2006).Far-infrared absorption studies of Be acceptors in delta-doped GaAs/AlAs multiple quantum wells.SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,49(6),702-708.
MLA Zheng Weimin,et al."Far-infrared absorption studies of Be acceptors in delta-doped GaAs/AlAs multiple quantum wells".SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY 49.6(2006):702-708.
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