Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

	Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
	Ren, WC ; Liu, B ; Song, ZT ; Xiang, YH ; Wang, ZT ; Zhang, BC ; Feng, SL
刊名	CHINESE PHYSICS B
	2012
卷号	21 期号:11 页码:115203
关键词	deposit-etch-deposit process single step deposit gap filling re-deposition
ISSN号	1674-1056
通讯作者	Liu, B (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China.
中文摘要	Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition co
学科主题	Physics
收录类别	2012SCI-019
原文出处	10.1088/1674-1056/21/11/115203
语种	英语
公开日期	2013-04-23
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114892]
专题	上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式 GB/T 7714	Ren, WC,Liu, B,Song, ZT,et al. Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material[J]. CHINESE PHYSICS B,2012,21(11):115203.
APA	Ren, WC.,Liu, B.,Song, ZT.,Xiang, YH.,Wang, ZT.,...&Feng, SL.(2012).Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material.CHINESE PHYSICS B,21(11),115203.
MLA	Ren, WC,et al."Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material".CHINESE PHYSICS B 21.11(2012):115203.