Isotropic Silicon Etching With XeF2 Gas for Wafer-Level Micromachining Applications

	Isotropic Silicon Etching With XeF2 Gas for Wafer-Level Micromachining Applications
	Xu, DH ; Xiong, B ; Wu, GQ ; Wang, YC ; Sun, X ; Wang, YL
刊名	JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
	2012
卷号	21 期号:6 页码:1436-1444
关键词	Design rule isotropic etching microelectromechanical systems (MEMS) micromachining wafer level XeF2 gas
ISSN号	1057-7157
通讯作者	Xu, DH (reprint author), Chinese Acad Sci, Sci & Technol Microsyst Lab, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要	Wafer-level isotropic etching of silicon with XeF2 gas has been investigated for microelectromechanical-system (MEMS) fabrication. Because of the large exposed silicon area in the wafer-level process, XeF2 gas diffusion in the wafer-level process is diffe
学科主题	Engineering
收录类别	2012SCI-003
原文出处	10.1109/JMEMS.2012.2209403
语种	英语
公开日期	2013-04-23
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114887]
专题	上海微系统与信息技术研究所_微系统技术_期刊论文
推荐引用方式 GB/T 7714	Xu, DH,Xiong, B,Wu, GQ,et al. Isotropic Silicon Etching With XeF2 Gas for Wafer-Level Micromachining Applications[J]. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,2012,21(6):1436-1444.
APA	Xu, DH,Xiong, B,Wu, GQ,Wang, YC,Sun, X,&Wang, YL.(2012).Isotropic Silicon Etching With XeF2 Gas for Wafer-Level Micromachining Applications.JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,21(6),1436-1444.
MLA	Xu, DH,et al."Isotropic Silicon Etching With XeF2 Gas for Wafer-Level Micromachining Applications".JOURNAL OF MICROELECTROMECHANICAL SYSTEMS 21.6(2012):1436-1444.