Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

	Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
	Zhao, QT ; Yu, WJ ; Zhang, B ; Schmidt, M ; Richter, S ; Buca, D ; Hartmann, JM ; Luptak, R ; Fox, A ; Bourdelle, KK ; Mantl, S
刊名	SOLID-STATE ELECTRONICS
	2012
卷号	74 页码:97-101
关键词	Tunnel FET Strained Si Subthreshold swing SiGe
ISSN号	0038-1101
通讯作者	Zhao, QT (reprint author), Forschungszentrum Julich, JARA FIT, Peter Grunberg Inst 9, D-52425 Julich, Germany.
中文摘要	We report on n-channel tunneling field-effect transistors (TFET) with a tensile strained Si channel and a compressively strained Si0.5Ge0 5 source. The device shows good performance with an average subthreshold swing S of 80 mV/dec over a drain current ra
学科主题	Engineering; Physics
收录类别	2012SCI-084
原文出处	10.1016/j.sse.2012.04.018
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114859]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhao, QT,Yu, WJ,Zhang, B,et al. Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source[J]. SOLID-STATE ELECTRONICS,2012,74:97-101.
APA	Zhao, QT.,Yu, WJ.,Zhang, B.,Schmidt, M.,Richter, S.,...&Mantl, S.(2012).Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source.SOLID-STATE ELECTRONICS,74,97-101.
MLA	Zhao, QT,et al."Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source".SOLID-STATE ELECTRONICS 74(2012):97-101.