Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

	Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene
	Zhang, YW ; Wan, L ; Cheng, XH ; Wang, ZJ ; Xia, C ; Cao, D ; Jia, TT ; Yu, YH
刊名	JOURNAL OF INORGANIC MATERIALS
	2012
卷号	27 期号:9 页码:956-960
关键词	graphene atomic layer deposition Al2O3 dielectrics
ISSN号	1000-324X
通讯作者	Zhang, YW (reprint author), Wenzhou Univ, Dept Phys, Wenzhou 325035, Peoples R China.
中文摘要	Al2O3 films were deposited directly onto the surface of graphene by H2O-based atomic layer deposition (ALD) method, where physically absorbed water molecules acted as oxidant and the growing temperature changed from 60 degrees C to 260 degrees C. The morp
学科主题	Materials Science
收录类别	2012SCI-056
原文出处	10.3724/SP.J.1077.2012.11663
语种	中文
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114831]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, YW,Wan, L,Cheng, XH,et al. Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene[J]. JOURNAL OF INORGANIC MATERIALS,2012,27(9):956-960.
APA	Zhang, YW.,Wan, L.,Cheng, XH.,Wang, ZJ.,Xia, C.,...&Yu, YH.(2012).Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene.JOURNAL OF INORGANIC MATERIALS,27(9),956-960.
MLA	Zhang, YW,et al."Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene".JOURNAL OF INORGANIC MATERIALS 27.9(2012):956-960.