Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials

	Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
	Rao, F ; Song, ZT ; Cheng, Y ; Xia, MJ ; Ren, K ; Wu, LC ; Liu, B ; Feng, SL
刊名	ACTA MATERIALIA
	2012
卷号	60 期号:1 页码:323-328
关键词	Phase change Band gap Density of localized states
ISSN号	1359-6454
通讯作者	Rao, F (reprint author), Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China.
中文摘要	Upon phase transition, the resistivity changes of Ge2Sb2Te5 (GST) and Si3.5Sb2Te3 (SST) are proved to be closely related to the variations of band gap and density of localized states. Amorphous SST has a slightly more localized state than amorphous GST; h
学科主题	Materials Science; Metallurgy & Metallurgical Engineering
收录类别	2012SCI-264
原文出处	10.1016/j.actamat.2011.09.015
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114791]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Rao, F,Song, ZT,Cheng, Y,et al. Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials[J]. ACTA MATERIALIA,2012,60(1):323-328.
APA	Rao, F.,Song, ZT.,Cheng, Y.,Xia, MJ.,Ren, K.,...&Feng, SL.(2012).Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials.ACTA MATERIALIA,60(1),323-328.
MLA	Rao, F,et al."Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials".ACTA MATERIALIA 60.1(2012):323-328.