Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory

	Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory
	Wang, GX ; Shen, X ; Nie, QH ; Wang, RP ; Wu, LC ; Lv, YG ; Chen, F ; Fu, J ; Dai, SX ; Li, J
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2012
卷号	45 期号:37 页码:375302
ISSN号	0022-3727
通讯作者	Nie, QH (reprint author), Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China.
中文摘要	Al-x(Ge2Sb2Te5)(100-x) materials with different Al contents are systemically studied for applications in phase-change random access memory (PRAM) devices. Al-doped Ge2Sb2Te5 (GST) films show better thermal stability than GST because they do not have phase
学科主题	Physics
收录类别	2012SCI-047
原文出处	10.1088/0022-3727/45/37/375302
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114783]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang, GX,Shen, X,Nie, QH,et al. Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2012,45(37):375302.
APA	Wang, GX.,Shen, X.,Nie, QH.,Wang, RP.,Wu, LC.,...&Li, J.(2012).Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory.JOURNAL OF PHYSICS D-APPLIED PHYSICS,45(37),375302.
MLA	Wang, GX,et al."Improved thermal and electrical properties of Al-doped Ge2Sb2Te5 films for phase-change random access memory".JOURNAL OF PHYSICS D-APPLIED PHYSICS 45.37(2012):375302.