Dynamical band-engineering of spin-polarized edge-states in normal insulators

	Dynamical band-engineering of spin-polarized edge-states in normal insulators
	Wu, BH ; Liu, Q ; Jiang, XY ; Cao, JC
刊名	APPLIED PHYSICS LETTERS
	2012
卷号	100 期号:20 页码:203106
ISSN号	0003-6951
通讯作者	Wu, BH (reprint author), Donghua Univ, Dept Appl Phys, 2999 N Renmin Rd, Shanghai 201620, Peoples R China.
中文摘要	We investigate the electronic and transport properties of a normal insulator in form of a zigzag ribbon based on the Kane-Mele model subjected to circularly polarized radiation. Our results show that chiral edge-states can be induced in the band gap of th
学科主题	Physics
收录类别	2012SCI-122
原文出处	10.1063/1.4717987
语种	英语
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114761]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wu, BH,Liu, Q,Jiang, XY,et al. Dynamical band-engineering of spin-polarized edge-states in normal insulators[J]. APPLIED PHYSICS LETTERS,2012,100(20):203106.
APA	Wu, BH,Liu, Q,Jiang, XY,&Cao, JC.(2012).Dynamical band-engineering of spin-polarized edge-states in normal insulators.APPLIED PHYSICS LETTERS,100(20),203106.
MLA	Wu, BH,et al."Dynamical band-engineering of spin-polarized edge-states in normal insulators".APPLIED PHYSICS LETTERS 100.20(2012):203106.