Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT

	Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT
	Zhou, SL ; Wan-Chun, Y ; Hong-Liang, R ; Jia, L
刊名	ACTA PHYSICA SINICA
	2012
卷号	61 期号:12 页码:128501
关键词	InAlAs/GaSbAs InP/GaSbAs II-type DHBT
ISSN号	1000-3290
通讯作者	Zhou, SL (reprint author), Zhejiang Univ Technol, Coll Informat Engn, Hangzhou 310023, Peoples R China.
中文摘要	The characteristics of a double heterojunction bipolar transistor(DHBT) depend closely on the type of band alignment structure at the hetero-interface between emitter-base(E-B) heterojunction and base-collector(B-C) heterojunction. Based on thermionic-fie
学科主题	Physics
语种	中文
公开日期	2013-04-17
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/114752]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhou, SL,Wan-Chun, Y,Hong-Liang, R,et al. Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT[J]. ACTA PHYSICA SINICA,2012,61(12):128501.
APA	Zhou, SL,Wan-Chun, Y,Hong-Liang, R,&Jia, L.(2012).Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT.ACTA PHYSICA SINICA,61(12),128501.
MLA	Zhou, SL,et al."Comparison of the performance for InAlAs/GaSbAs/InP DHBT and InP/GaSbAs/InP DHBT".ACTA PHYSICA SINICA 61.12(2012):128501.