Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor

	Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor
	Xu XN (Xu Xiao-Na) ; Wang XD (Wang Xiao-Dong) ; Li YQ (Li Yue-Qiang) ; Chen YL (Chen Yan-Ling) ; Ji A (Ji An) ; Zeng YP (Zeng Yi-Ping) ; Yang FH (Yang Fu-Hua)
刊名	chinese physics letters
	2012
卷号	29 期号:8 页码:087303
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2013-04-18
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23881]
专题	半导体研究所_半导体集成技术工程研究中心
推荐引用方式 GB/T 7714	Xu XN ,Wang XD ,Li YQ ,et al. Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor[J]. chinese physics letters,2012,29(8):087303.
APA	Xu XN .,Wang XD .,Li YQ .,Chen YL .,Ji A .,...&Yang FH .(2012).Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor.chinese physics letters,29(8),087303.
MLA	Xu XN ,et al."Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor".chinese physics letters 29.8(2012):087303.