Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition

	Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition
	Wang JM (Wang, Jiaming) ; Xu FJ (Xu, Fujun) ; Huang CC (Huang, Chengcheng) ; Xu ZY (Xu, Zhengyu) ; Zhang X (Zhang, Xia) ; Wang Y (Wang, Yan) ; Ge WK (Ge, Weikun) ; Wang XQ (Wang, Xinqiang) ; Yang ZJ (Yang, Zhijian) ; Shen B (Shen, Bo) ; Li W (Li, Wei) ; Wang WY (Wang, Weiying) ; Jin P (Jin, Peng)
刊名	applied physics express
	2012
卷号	5 期号:10 页码:101002
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-03-27
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23797]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wang JM ,Xu FJ ,Huang CC ,et al. Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition[J]. applied physics express,2012,5(10):101002.
APA	Wang JM .,Xu FJ .,Huang CC .,Xu ZY .,Zhang X .,...&Jin P .(2012).Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition.applied physics express,5(10),101002.
MLA	Wang JM ,et al."Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition".applied physics express 5.10(2012):101002.