Purification of metallurgical silicon through directional solidification in a large cold crucible | |
Liu T (Liu, Tong) ; Dong ZY (Dong, Zhiyuan) ; Zhao YW (Zhao, Youwen) ; Wang J (Wang, Jun) ; Chen T (Chen, Teng) ; Xie H (Xie, Hui) ; Li J (Li, Jian) ; Ni HJ (Ni, Haijiang) ; Huo DX (Huo, Dianxin) | |
刊名 | journal of crystal growth |
2012 | |
卷号 | 355期号:1页码:145-150 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-03-27 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/23827] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Liu T ,Dong ZY ,Zhao YW ,et al. Purification of metallurgical silicon through directional solidification in a large cold crucible[J]. journal of crystal growth,2012,355(1):145-150. |
APA | Liu T .,Dong ZY .,Zhao YW .,Wang J .,Chen T .,...&Huo DX .(2012).Purification of metallurgical silicon through directional solidification in a large cold crucible.journal of crystal growth,355(1),145-150. |
MLA | Liu T ,et al."Purification of metallurgical silicon through directional solidification in a large cold crucible".journal of crystal growth 355.1(2012):145-150. |
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