Purification of metallurgical silicon through directional solidification in a large cold crucible
Liu T (Liu, Tong) ; Dong ZY (Dong, Zhiyuan) ; Zhao YW (Zhao, Youwen) ; Wang J (Wang, Jun) ; Chen T (Chen, Teng) ; Xie H (Xie, Hui) ; Li J (Li, Jian) ; Ni HJ (Ni, Haijiang) ; Huo DX (Huo, Dianxin)
刊名journal of crystal growth
2012
卷号355期号:1页码:145-150
学科主题半导体材料
收录类别SCI
语种英语
公开日期2013-03-27
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/23827]  
专题半导体研究所_中科院半导体材料科学重点实验室
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GB/T 7714
Liu T ,Dong ZY ,Zhao YW ,et al. Purification of metallurgical silicon through directional solidification in a large cold crucible[J]. journal of crystal growth,2012,355(1):145-150.
APA Liu T .,Dong ZY .,Zhao YW .,Wang J .,Chen T .,...&Huo DX .(2012).Purification of metallurgical silicon through directional solidification in a large cold crucible.journal of crystal growth,355(1),145-150.
MLA Liu T ,et al."Purification of metallurgical silicon through directional solidification in a large cold crucible".journal of crystal growth 355.1(2012):145-150.
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