Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity

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	Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity
	Huang ZL (Huang Zengli) ; Wang JF (Wang Jianfeng) ; Liu ZH (Liu Zhenghui) ; Xu K (Xu Ke) ; Yang H (Yang Hui) ; Cao B (Cao Bing) ; Han Q (Han Qin) ; Zhang GJ (Zhang Guiju) ; Wang CH (Wang Chinhua)
刊名	applied physics express
	2010
卷号	3 期号:7 页码:art. no. 072001
关键词	LIGHT-EMITTING-DIODES
通讯作者	wang, jf, chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215125, peoples r china. 电子邮箱地址: jfwang2006@sinano.ac.cn
合作状况	国内
英文摘要	the photoluminescence (pl) intensity enhancement and suppression mechanism on surface plasmons (sps) coupling with ingan/gan quantum wells (qws) have been systematically studied. the sp-qw coupling behaviors in the areas of gan cap layer coated with silver thin film were compared at different temperatures and excitation powers. it is found that the internal quantum efficiency (iqe) of the light emitting diodes (leds) varies with temperature and excitation power, which in turn results in anomalous emission enhancement and suppression tendency related to sp-qw coupling. the observation is explained by the balance between the extraction efficiency of sps and the iqe of leds; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-08-17t02:47:19z no. of bitstreams: 1 apex-3-072001.pdf: 369597 bytes, checksum: d6a0571c8440545bb233a6e7355586f8 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-08-17t02:54:38z (gmt) no. of bitstreams: 1 apex-3-072001.pdf: 369597 bytes, checksum: d6a0571c8440545bb233a6e7355586f8 (md5); made available in dspace on 2010-08-17t02:54:38z (gmt). no. of bitstreams: 1 apex-3-072001.pdf: 369597 bytes, checksum: d6a0571c8440545bb233a6e7355586f8 (md5) previous issue date: 2010; this work was supported by the grants of the national natural science foundation (nos. 10704052, 60776065, and 60776003), suzhou high-tech research program (zxg0712) and the chinese basic research program (973 no. 2007cb936701) from the chinese science and technology ministry.; 国内
学科主题	光电子学
收录类别	SCI
资助信息	this work was supported by the grants of the national natural science foundation (nos. 10704052, 60776065, and 60776003), suzhou high-tech research program (zxg0712) and the chinese basic research program (973 no. 2007cb936701) from the chinese science and technology ministry.
语种	英语
公开日期	2010-08-17 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13493]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Huang ZL ,Wang JF ,Liu ZH ,et al. Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity[J]. applied physics express,2010,3(7):art. no. 072001.
APA	Huang ZL .,Wang JF .,Liu ZH .,Xu K .,Yang H .,...&Wang CH .(2010).Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity.applied physics express,3(7),art. no. 072001.
MLA	Huang ZL ,et al."Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity".applied physics express 3.7(2010):art. no. 072001.