Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs

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	Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs
	Luo J (Luo Jing) ; Zheng HZ (Zheng HouZhi) ; Shen C (Shen Chao) ; Zhang H (Zhang Hao) ; Zhu K (Zhu Ke) ; Zhu ; H (Zhu Hui) ; Liu J (Liu Jian) ; Li GR (Li GuiRong) ; Ji Y (Ji Yang) ; Zhao JH (Zhao JianHua)
刊名	science china-physics mechanics & astronomy
	2010
卷号	53 期号:5 页码:779-782
关键词	dilute magnetic semiconductor magneto-crystalline anisotropy time-resolved Kerr rotation coherent precession
通讯作者	zheng, hz, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: hzzheng@red.semi.ac.cn
合作状况	其它
英文摘要	we report that, by linearly polarized pumping of different wavelengths, kerr transients appear at zero magnetic field only in the case when gamnas samples are initialized at 3 k by first applying a 0.8 tesla field and then returning to zero field. we find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. when photon energy increases, the peak value of the kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24t05:34:49z no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24t07:15:54z (gmt) no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5); made available in dspace on 2010-05-24t07:15:54z (gmt). no. of bitstreams: 1 ultrafast photo-induced turning of magnetization and its relaxation dynamics in gamnas.pdf: 634007 bytes, checksum: 725308005155f893439c1af4306adf95 (md5) previous issue date: 2010; national basic research program of china 2006cb932801 2007cb924903 2007cb924904 chinese academy of sciences kjcx.yw.w09 national natural science foundation of china 60836002 10674130 6052100; 其它
学科主题	半导体物理
收录类别	SCI
资助信息	national basic research program of china 2006cb932801 2007cb924903 2007cb924904 chinese academy of sciences kjcx.yw.w09 national natural science foundation of china 60836002 10674130 6052100
语种	英语
公开日期	2010-05-24 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11230]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Luo J ,Zheng HZ ,Shen C ,et al. Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs[J]. science china-physics mechanics & astronomy,2010,53(5):779-782.
APA	Luo J .,Zheng HZ .,Shen C .,Zhang H .,Zhu K .,...&Zhao JH .(2010).Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs.science china-physics mechanics & astronomy,53(5),779-782.
MLA	Luo J ,et al."Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs".science china-physics mechanics & astronomy 53.5(2010):779-782.