Analysis of Silicon ion-implanted Nd:YVO(4) as a waveguide laser medium operating at 1.06 mu m | |
Du, Guolong; Li, Guiqiu; Zhao, Shengzhi; An, Jing; Li, Ming; Liang, Jian; Li, Tao; Wang, Wei | |
2009 | |
会议名称 | International Symposium on Photonics and Optoelectronics |
会议日期 | AUG 14-16, 2009 |
关键词 | waveguide laser ion implantation refractive index profile Nd:YVO(4) |
页码 | 9-12 |
收录类别 | CPCI-S |
会议录 | 2009 SYMPOSIUM ON PHOTONICS AND OPTOELECTRONICS (SOPO 2009) |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6069927 |
专题 | 山东大学 |
作者单位 | Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, P |
推荐引用方式 GB/T 7714 | Du, Guolong,Li, Guiqiu,Zhao, Shengzhi,et al. Analysis of Silicon ion-implanted Nd:YVO(4) as a waveguide laser medium operating at 1.06 mu m[C]. 见:International Symposium on Photonics and Optoelectronics. AUG 14-16, 2009. |
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