Resistance switching properties of Cu2S film by electrochemical deposition | |
Yan, Yongming; Yang, C.P.; B盲rner, K.; Marchenkov, V.V.; Zeng, Yun | |
刊名 | Applied Surface Science |
2016 | |
卷号 | Vol.360 Part B页码:875-879 |
关键词 | Cuprous sulfide Electrochemical deposition Interfacial effects EPIR effect Resistive memory |
ISSN号 | 0169-4332 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/6064838 |
专题 | 湖南大学 |
作者单位 | 1.School of Physics and Electronics, Hunan University, Changsha 2.410082, China 3.Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Physics and Electronic Science, Hubei University, Wuhan 4.430062, China 5.Depar |
推荐引用方式 GB/T 7714 | Yan, Yongming,Yang, C.P.,B盲rner, K.,et al. Resistance switching properties of Cu2S film by electrochemical deposition[J]. Applied Surface Science,2016,Vol.360 Part B:875-879. |
APA | Yan, Yongming,Yang, C.P.,B盲rner, K.,Marchenkov, V.V.,&Zeng, Yun.(2016).Resistance switching properties of Cu2S film by electrochemical deposition.Applied Surface Science,Vol.360 Part B,875-879. |
MLA | Yan, Yongming,et al."Resistance switching properties of Cu2S film by electrochemical deposition".Applied Surface Science Vol.360 Part B(2016):875-879. |
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