Growth of large domain epitaxial graphene on the C-face of SiC

	Growth of large domain epitaxial graphene on the C-face of SiC
	Zhang R (Zhang, Rui) ; Dong YL (Dong, Yunliang) ; Kong WJ (Kong, Wenjie) ; Han WP (Han, Wenpeng) ; Tan PH (Tan, Pingheng) ; Liao ZM (Liao, Zhimin) ; Wu XS (Wu, Xiaosong) ; Yu DP (Yu, Dapeng)
刊名	journal of applied physics
	2012
卷号	112 期号:10 页码:104307
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2013-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23766]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhang R ,Dong YL ,Kong WJ ,et al. Growth of large domain epitaxial graphene on the C-face of SiC[J]. journal of applied physics,2012,112(10):104307.
APA	Zhang R .,Dong YL .,Kong WJ .,Han WP .,Tan PH .,...&Yu DP .(2012).Growth of large domain epitaxial graphene on the C-face of SiC.journal of applied physics,112(10),104307.
MLA	Zhang R ,et al."Growth of large domain epitaxial graphene on the C-face of SiC".journal of applied physics 112.10(2012):104307.