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	Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.
	Abliz, A; Gao, QG; Wan, D; Liu, XQ; Xu, L; Liu, CS; Jiang, CZ; Li, XF; Chen, HP; Guo, TL
刊名	ACS Appl Mater Interfaces
	2017
卷号	Vol.9 No.12页码:10798-10804
ISSN号	1944-8244
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6043650
专题	湖南大学
作者单位	1.Wuhan Univ, Sch Phys & Technol, Dept Microelect, Wuhan 430072, Peoples R China 2.Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China 3.Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Peoples R China 4.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China 5.Hunan Univ, Sch Phys & Elect, Key Lab Micro Nanooptoelect Devices, Minist Educ, Changsha 410082, Hunan, Peoples R China 6.Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
推荐引用方式 GB/T 7714	Abliz, A,Gao, QG,Wan, D,et al. Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.[J]. ACS Appl Mater Interfaces,2017,Vol.9 No.12:10798-10804.
APA	Abliz, A.,Gao, QG.,Wan, D.,Liu, XQ.,Xu, L.,...&Guo, TL.(2017).Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors..ACS Appl Mater Interfaces,Vol.9 No.12,10798-10804.
MLA	Abliz, A,et al."Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.".ACS Appl Mater Interfaces Vol.9 No.12(2017):10798-10804.

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