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	Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors
	Li, G.; Andre, N.; Gerard, P.; Ali, S.Z.; Udrea, F.; Francis, L.A.; Zeng, Y.; Flandre, D.
刊名	IEEE Transactions on Industrial Electronics
	2017
卷号	Vol.64 No.9页码:7368-7376
关键词	Backside reflector black silicon light detection local annealing multiple wavelength optical sensor P-I-N diode silicon-on-insulator (SOI)
ISSN号	0278-0046
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6042441
专题	湖南大学
作者单位	1.a School of Physics and Electronics, Hunan University, Changsha, China 2.Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universit 3.Catholique de Louvain, Louvain-la-Neuve, Belgium 4.Catholique de Louvain, Louvainla-Neuve, Belgium 5.Cambridge CMOS Sensors Ltd, Cambridge, United Kingdom 6.Department of Engineering, Electrical Engineering Division, University of Cambridge, Cambridge, United Kingdom
推荐引用方式 GB/T 7714	Li, G.,Andre, N.,Gerard, P.,et al. Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors[J]. IEEE Transactions on Industrial Electronics,2017,Vol.64 No.9:7368-7376.
APA	Li, G..,Andre, N..,Gerard, P..,Ali, S.Z..,Udrea, F..,...&Flandre, D..(2017).Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors.IEEE Transactions on Industrial Electronics,Vol.64 No.9,7368-7376.
MLA	Li, G.,et al."Multiple-Wavelength Detection in SOI Lateral PIN Diodes with Backside Reflectors".IEEE Transactions on Industrial Electronics Vol.64 No.9(2017):7368-7376.

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