| Variation of vanadium incorporation in semi-insulating SiC single crystals grown by PVT method | |
| Lee, Chae-Young; Choi, Jeong-Min; Kim, Dae-Sung; Park, Mi-Seon; Jang, Yeon-Suk; Lee, Won-Jae; Yang, In-Seok; Kim, Tae-Hee; Chen, Xiufang; Xu, Xiangang 更多 | |
| 2019 | |
| 会议名称 | 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 |
| 会议日期 | September 2, 2018 - September 6, 2018 |
| 卷号 | 963 MSF |
| DOI | 10.4028/www.scientific.net/MSF.963.30 |
| 页码 | 30-33 |
| 收录类别 | EI |
| 会议录 | Materials Science Forum
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6023370 |
| 专题 | 山东大学 |
| 作者单位 | Department of Advanced Materials Engineering, Dong-Eui |
| 推荐引用方式 GB/T 7714 | Lee, Chae-Young,Choi, Jeong-Min,Kim, Dae-Sung,et al. Variation of vanadium incorporation in semi-insulating SiC single crystals grown by PVT method[C]. 见:12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018. September 2, 2018 - September 6, 2018. |
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