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	Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser
	Huang, Zhong-Mei; Huang, Wei-Qi; Jiang, Zui-Min; Liu, Shi-Rong; Wu, Xue-Ke; Qin, Chao-Jian
	2017
卷号	42期号:2页码:358-361
URL标识	查看原文
WOS记录号	WOS:000392193100047
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5989418
专题	贵州大学
作者单位	1.[1]Guizhou Univ, Inst Nanophoton Phys, Guiyang 550025, Peoples R China 2.[2]Fudan Univ, State Key Lab Surface Phys, Key Lab Micro & Nano Photon Struct, Minist Educ, Shanghai 200433, Peoples R China 3.[3]Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 4.[4]Chinese Acad Sci, State Key Lab Environm Geochem, Inst Geochem, Guiyang 550003, Peoples R China
推荐引用方式 GB/T 7714	Huang, Zhong-Mei,Huang, Wei-Qi,Jiang, Zui-Min,et al. Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser[J],2017,42(2):358-361.
APA	Huang, Zhong-Mei,Huang, Wei-Qi,Jiang, Zui-Min,Liu, Shi-Rong,Wu, Xue-Ke,&Qin, Chao-Jian.(2017).Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser.,42(2),358-361.
MLA	Huang, Zhong-Mei,et al."Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser".42.2(2017):358-361.

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