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	Colloidal Precursor-Induced Growth of Ultra-Even CH3NH3PbI3 for High-Performance Paintable Carbon-Based Perovskite Solar Cells
	Chang, Xiaowen; Li, Weiping; Chen, Haining; Zhu, Liqun; Liu, Huicong; Geng, Huifang; Xiang, Sisi; Liu, Jiaming; Zheng, Xiaoli; Yang, Yinglong
刊名	ACS APPLIED MATERIALS & INTERFACES
	2016
卷号	8页码:30184-30192
关键词	carbon-based perovskite solar cells hole transport material-free interface contact dimethyl sulfoxide dimethylformamide
ISSN号	1944-8244
DOI	10.1021/acsami.6b09925
URL标识	查看原文
收录类别	SCIE ; EI ; PUBMED
WOS记录号	WOS:000387737200039
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5954829
专题	北京航空航天大学
推荐引用方式 GB/T 7714	Chang, Xiaowen,Li, Weiping,Chen, Haining,et al. Colloidal Precursor-Induced Growth of Ultra-Even CH3NH3PbI3 for High-Performance Paintable Carbon-Based Perovskite Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8:30184-30192.
APA	Chang, Xiaowen.,Li, Weiping.,Chen, Haining.,Zhu, Liqun.,Liu, Huicong.,...&Yang, Shihe.(2016).Colloidal Precursor-Induced Growth of Ultra-Even CH3NH3PbI3 for High-Performance Paintable Carbon-Based Perovskite Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8,30184-30192.
MLA	Chang, Xiaowen,et al."Colloidal Precursor-Induced Growth of Ultra-Even CH3NH3PbI3 for High-Performance Paintable Carbon-Based Perovskite Solar Cells".ACS APPLIED MATERIALS & INTERFACES 8(2016):30184-30192.

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